| PART |
Description |
Maker |
| JDV2S71E |
UHF SHF TUNING
|
Toshiba Semiconductor
|
| 1SV245 |
VARIABLE CAPACITANCE DIODE (UHF SHF TUNING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2496 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| KDV287E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC(Korea Electronics)
|
| BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| S-AV17 E002849 |
RF POWER AMPLIFIER MODULE(HAM, VHF 50W FM RF POWER AMPLIFIER MODULE) 射频功率放大器模块（火腿，甚高频50瓦调频射频功率放大器模块
RF POWER AMPLIFIER MODULE(HAM/ VHF 50W FM RF POWER AMPLIFIER MODULE)
VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| APTGF100A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| LM340A LM340AT-5 7806 LM340AT-24 7808 7812 MC7808A |
16-A, 2.2-V to 5.5-V Input, Non-Isolated, Wide-Output, Adjustable Power Module with TurboTrans 11-DIP MODULE -40 to 85 15 V FIXED POSITIVE REGULATOR, PSFM3
THREE-TERMINAL POSITIVE VOLTAGE REGULATORS 三端电压调节
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 8 V FIXED POSITIVE REGULATOR, PSSO2
2.25 A, 4.5-V to 18-V Input Wide Adjust Miniature Power Module 5-DIP MODULE -40 to 85
6-A, 2.2V to 5.5V Input, Non-Isolated, Wide Output, Adjustable Power Module with TurboTrans 10-DIP MODULE -40 to 85
16-A, 4.5-V to 14-V Input, Ceramic Cap Version, Non-Iso, Wide Output Adj, Pwr Module w/TurboTrans 11-DIP MODULE -40 to 85
16-A, 4.5-V to 14-V Input, Non-Isolated, Wide Output Adjust, Power Module w/ TurboTrans 11-DIP MODULE -40 to 85
30-A, 5.5-V to 14-V Input, Non-Isolated, Wide Output Adjust, Power Module w/ TurboTrans 14-DIP MODULE -40 to 85
30-A, 4.5V to 5.5V Input, Non-Isolated, Wide Output Adjustable Power Module with TurboTrans 14-DIP MODULE -40 to 85
THREE TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
|
http://
MOTOROLA INC
ON Semiconductor
Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
